c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . w w w w f f f f f f f f 9n50 9n50 9n50 9n50 rev.a oct .2010 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 9a,500v, r ds(on) (max0.75 ? )@v gs =10v ? ultra-low gate charge(typical 30nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi's advanced planar stripe,dmos technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .this devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. absolute maximum ratings symbol parameter value units v dss drain source voltage 500 v i d continuous drain current(@tc=25 ) 9 a continuous drain current(@tc=100 ) 5.1 a i dm drain current pulsed (note1) 32 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 510 mj e ar repetitive avalanche energy (note1) 13 mj dv/dt peak diode recovery dv /dt (note3) 3.5 v/ ns p d total power dissipation(@tc=25 ) 44 w derating factor above 25 0.35 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 2.86 /w r qcs thermal resistance , c ase-to-sink - 0.5 - /w r qja thermal resistance , junction-to -ambient - - 62 .5 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f f f f f 9n50 9n50 9n50 9n50 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 500 v,v gs =0v - - 1 a v ds =400v,tc=125 10 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 500 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25 0.57 v/ gate threshold voltage v gs(th) v ds =10v,i d =250 a 3 - 5 v drain -source on resistance r ds(on) v gs =10v,i d = 4.8 a - - 0.75 ? forward transconductance gfs v ds =50v,i d = 4.8 a 3.7 s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 1018 - pf reverse transfer capacitance c rss - 8 - output capacitance c oss - 155 - switching time rise time tr v dd = 250 v, i d = 9 a r g = 9.1 ? r d =31 ? (note4,5) - 11 - ns turn-on time ton - 23 - fall time tf - 26 - turn-off time toff - 19 - total gate charge(gate-source plus gate-drain) qg v dd =4 00 v, v gs =10v, i d = 9 a (note 4 ,5) - 30 38 nc gate-source charge qgs - 7 9 gate-drain("miller") charge qgd - 15 18 source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 9 a pulse drain reverse current i drp - - - 32 a forward voltage(diode) v dsf i dr = 9 a,v gs =0v - 1.4 2.0 v reverse recovery time trr i dr = 9 a,v gs =0v, di dr / dt =100 a / s - 442 633 ns reverse recovery charge qrr - 2.16 3.24 c note 1.repeativity rating :pulse width limited by junction temperature 2.l=18.5mh i as = 9 a,v dd =50v,r g =0 ? ,starting t j =25 3.i sd 9 a,di/dt 3 00a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f f f f f 9n50 9n50 9n50 9n50 3 / 7 fig.1 on state characteristics fig.2 transfer characteristics fig.3 capacitance variation vs drain voltage fig.4 maximum avalanche energy vs on-state current fig.5 on-resistance variation vs junction temperature fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f f f f f 9n50 9n50 9n50 9n50 4 / 7 fig.7 maximum safe operation area fig.8 maximum drain current vs case temperature fig.9 transient thermal response curve
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f f f f f 9n50 9n50 9n50 9n50 5 / 7 fig.10 gate test circuit & waveform fig.11 resistive switching test circuit & waveform fig.12 unclamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f f f f f 9n50 9n50 9n50 9n50 6 / 7 fig.13 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f f f f f 9n50 9n50 9n50 9n50 7 / 7 to-220 to-220 to-220 to-220 f f f f package package package package dimension dimension dimension dimension unit:mm
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